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Semiconductors

23,839 materials

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Tm2 Bi2 O6

semiconductorTm2 Bi2 O6

Tm₂Bi₂O₆ is a rare-earth bismuth oxide ceramic compound combining thulium and bismuth in a mixed-valence oxide structure. This material is primarily investigated in research contexts for its potential as a semiconductor with applications in photocatalysis, thermal management, and advanced electronic devices, where the rare-earth and heavy-metal oxide components may provide unique optical and electrical properties distinct from conventional oxides.

photocatalytic applicationssemiconductor researchthermal management systems
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Tm2 Br6

semiconductorTm2 Br6

Tm₂Br₆ is a rare-earth halide semiconductor compound composed of thulium and bromine, belonging to the family of lanthanide halides studied for their electronic and photonic properties. This material remains largely in the research phase, investigated primarily for potential applications in advanced optoelectronics, scintillation detection, and solid-state lighting where rare-earth halides offer tunable bandgaps and luminescent characteristics. Compared to more established semiconductors like silicon or III-V compounds, halide perovskites and rare-earth halides are valued for their solution-processability and unique optical properties, though their stability and scalability challenges limit current industrial deployment.

scintillation detectorsphotonic research devicesrare-earth optoelectronics
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Tm2 Cd1 Hg1

semiconductorTm2 Cd1 Hg1

Tm₂CdHg is an intermetallic compound combining thulium (a rare-earth element) with cadmium and mercury, classified as a semiconductor material. This is a research-phase compound studied primarily for its electronic and magnetic properties rather than established industrial production. The rare-earth intermetallic family shows potential in specialized applications requiring controlled band-gap behavior or magnetic responses, though Tm₂CdHg itself remains largely confined to materials research and solid-state physics studies exploring rare-earth semiconductor phase diagrams and potential thermoelectric or magnetoelectronic device platforms.

rare-earth intermetallic researchsemiconductor phase studiessolid-state physics characterization
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Tm2 Cd1 In1

semiconductorTm2 Cd1 In1

Tm₂CdIn is an intermetallic compound combining thulium (a rare-earth element), cadmium, and indium in a 2:1:1 stoichiometry. This is a research-phase material studied primarily for its electronic and magnetic properties rather than established commercial applications. The material belongs to the family of rare-earth intermetallics, which are investigated for potential use in thermoelectric devices, magnetocaloric applications, and semiconductor research where the combination of rare-earth, post-transition metal, and semiconductor elements may yield unusual electronic structures or low-dimensional carrier behavior.

thermoelectric researchrare-earth compoundsexperimental semiconductors
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Tm2 Cd1 Os1

semiconductorTm2 Cd1 Os1

Tm₂CdOs is an intermetallic compound combining thulium (a rare-earth element), cadmium, and osmium—a research-phase material in the broader family of rare-earth intermetallics. This ternary system is primarily of academic and exploratory interest, as it bridges rare-earth metallurgy with high-density transition metals; such compounds are investigated for potential applications in thermoelectric devices, magnetic materials, and high-performance electronic systems where rare-earth elements contribute unique electronic or magnetic properties. Engineers evaluating this material should recognize it as an early-stage compound requiring laboratory characterization rather than a production-ready engineering alloy, though the intermetallic family shows promise in energy conversion and specialized electronic applications where conventional semiconductors are insufficient.

thermoelectric researchrare-earth intermetallicsexperimental semiconductor compounds
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Tm2 Co1 Cu1

semiconductorTm2 Co1 Cu1

Tm₂Co₁Cu₁ is an intermetallic compound combining thulium (a rare-earth element), cobalt, and copper in a fixed stoichiometric ratio. This is a research-phase material primarily studied for its potential magnetic and electronic properties rather than established industrial production; such rare-earth intermetallics are explored for applications requiring specific magnetic behavior, thermal properties, or electronic functionality that conventional alloys cannot provide.

rare-earth intermetallics researchmagnetic materials developmentthermoelectric applications (exploratory)
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Tm2 Co1 Ir1

semiconductorTm2 Co1 Ir1

Tm₂Co₁Ir₁ is an intermetallic compound combining thulium (a rare-earth element), cobalt, and iridium in a 2:1:1 stoichiometry. This is a research-phase material studied primarily in condensed matter physics and materials science for its potential electronic and magnetic properties, rather than a commercial engineering alloy. The compound belongs to the family of rare-earth transition-metal intermetallics, which are investigated for applications in permanent magnets, thermoelectric devices, and exotic quantum materials, though Tm₂Co₁Ir₁ specifically remains largely in the experimental domain with limited established industrial adoption.

rare-earth intermetallics (research)quantum materials explorationpermanent magnet candidates
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Tm2 Co1 Os1

semiconductorTm2 Co1 Os1

Tm₂Co₁Os₁ is an experimental intermetallic compound combining rare-earth (thulium), transition metal (cobalt), and refractory metal (osmium) elements in a defined stoichiometry. This material belongs to the semiconductor class and represents a research-phase composition being investigated for potential high-performance applications where extreme stability, corrosion resistance, and electronic properties are required. The combination of refractory osmium with rare-earth elements is typical of exploratory work in thermoelectric, magnetoelectronic, or ultra-high-temperature semiconductor applications, though industrial adoption remains limited pending further characterization and process development.

Research and development compoundsHigh-temperature semiconductorsThermoelectric device exploration
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Tm2 Co1 Ru1

semiconductorTm2 Co1 Ru1

Tm₂CoRu is an intermetallic compound combining thulium (a rare earth element) with cobalt and ruthenium, classified as a semiconductor. This is a research-phase material studied for its electronic and magnetic properties rather than an established commercial alloy. Intermetallic compounds in this family are investigated for potential applications in thermoelectric devices, magnetic materials, and high-temperature electronics where the unique electronic structure of rare earth–transition metal combinations offers advantages over conventional semiconductors.

thermoelectric devicesresearch materialsrare earth intermetallics
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Tm2 Co2 C2

semiconductorTm2 Co2 C2

Tm₂Co₂C₂ is a ternary carbide compound combining thulium, cobalt, and carbon, belonging to the family of transition metal carbides and rare-earth containing intermetallic compounds. This material remains primarily in the research and development phase, with potential applications in hard coatings, high-temperature materials, and electronic devices where rare-earth doping may enhance functional properties. The incorporation of thulium (a lanthanide) alongside cobalt carbide suggests potential use in specialized scenarios requiring magnetic, thermal, or electronic property enhancements beyond conventional binary carbide systems.

research compound—early stagehard coatings and surface protectionhigh-temperature structural applications
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Tm2 Cr2 C3

semiconductorTm2 Cr2 C3

Tm₂Cr₂C₃ is a ternary carbide ceramic compound combining thulium, chromium, and carbon, belonging to the family of refractory transition metal carbides. This material remains largely experimental and is primarily of interest in materials research for high-temperature and wear-resistant applications, where the combined properties of rare-earth and transition metal carbides offer potential advantages over conventional binary carbides in specific thermal or chemical environments.

refractory ceramics researchhigh-temperature structural materialswear-resistant coatings
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Tm2 Cu1 Ir1

semiconductorTm2 Cu1 Ir1

Tm₂Cu₁Ir₁ is an intermetallic compound combining thulium (a rare-earth element), copper, and iridium in a defined stoichiometric ratio. This is a research-phase material studied primarily for its electronic and magnetic properties rather than a commercial engineering alloy; such rare-earth–transition-metal intermetallics are explored for their potential in quantum materials, strongly correlated electron systems, and novel magnetic behavior that differs markedly from their constituent elements alone.

rare-earth intermetallics researchquantum materials developmentmagnetic property exploration
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Tm2 Cu1 Os1

semiconductorTm2 Cu1 Os1

Tm₂Cu₁Os₁ is an experimental ternary intermetallic compound combining thulium (rare earth), copper, and osmium—a material class typically investigated for advanced electronic and magnetic properties. This compound remains largely in the research phase and represents exploration within rare earth-transition metal intermetallics, a family valued for potential applications in high-performance electronics, magnetism, and thermoelectric devices. Engineers would consider this material primarily in fundamental research contexts rather than established production, where its unique electronic structure and mechanical characteristics offer opportunities for specialized device development.

rare earth intermetallics researchexperimental semiconductorshigh-performance electronics development
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Tm2 Cu1 Pd1

semiconductorTm2 Cu1 Pd1

Tm₂Cu₁Pd₁ is an intermetallic compound combining rare-earth thulium with transition metals copper and palladium, classified as a semiconductor. This is a research-phase material rather than an established commercial product; compounds in this family are investigated for potential applications in thermoelectric energy conversion, magnetic devices, and electronic materials where the combination of rare-earth and noble-metal constituents creates unique electronic band structures. Engineers would consider this material primarily in advanced materials R&D contexts where high-performance semiconducting or electronic properties at specific operating conditions are needed and cost is not a primary constraint.

thermoelectric devices (research)advanced semiconductors (experimental)magnetic materials research
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Tm2 Cu1 Pt1

semiconductorTm2 Cu1 Pt1

Tm₂Cu₁Pt₁ is an intermetallic compound combining thulium (a rare-earth element), copper, and platinum in a defined stoichiometric ratio. This is a research-stage material rather than an established engineering commodity; intermetallic compounds of this type are typically investigated for their unique electronic, magnetic, or catalytic properties that differ substantially from their constituent elements.

research semiconductorsrare-earth compoundscatalysis (theoretical)
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Tm2 Cu1 Ru1

semiconductorTm2 Cu1 Ru1

Tm₂Cu₁Ru₁ is an intermetallic compound combining thulium (a rare-earth element), copper, and ruthenium in a 2:1:1 stoichiometry. This is a research-phase material primarily of academic interest, studied for its electronic and magnetic properties as part of rare-earth transition-metal compound families. While not yet commercialized, materials in this class are investigated for potential applications in quantum materials, topological electronics, and high-performance magnetic systems where the interplay between rare-earth magnetism and transition-metal electronic structure offers tunable functionality.

quantum materials researchtopological electronicsrare-earth compounds
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Tm2 Cu2 As4

semiconductorTm2 Cu2 As4

Tm₂Cu₂As₄ is a ternary intermetallic semiconductor compound combining thulium, copper, and arsenic in a structured crystalline lattice. This material belongs to the family of rare-earth transition-metal pnictides and is primarily investigated in research settings for its potential electronic and thermal properties rather than established industrial production. While not yet widely commercialized, compounds in this family are explored for thermoelectric applications, solid-state electronics, and materials with tunable band gaps for specialized semiconductor devices.

Thermoelectric energy conversion (research)Solid-state electronics and semiconductors (experimental)High-temperature materials development
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Tm2 Cu2 Pb2

semiconductorTm2 Cu2 Pb2

Tm₂Cu₂Pb₂ is an intermetallic compound containing thulium, copper, and lead, representing a ternary metal system of primarily research interest. This material belongs to the family of rare-earth transition-metal compounds, which are typically investigated for their magnetic, electronic, or thermoelectric properties. Limited commercial deployment exists; the compound is of specialized academic interest for fundamental materials physics and potential functional applications in low-temperature or niche electronic contexts.

Research and developmentThermoelectric materialsMagnetic materials investigation
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Tm2 Cu2 Si2

semiconductorTm2 Cu2 Si2

Tm₂Cu₂Si₂ is an intermetallic compound belonging to the rare-earth transition-metal silicide family, combining thulium (a lanthanide) with copper and silicon. This material is primarily of research interest rather than established industrial production, investigated for potential semiconductor or electronic device applications where rare-earth intermetallics may offer unique electronic or thermal properties. The compound's stiffness and hardness characteristics make it relevant to emerging studies in high-temperature materials and specialized electronic components, though widespread commercial adoption remains limited pending further development and cost-feasibility analysis.

rare-earth semiconductorsintermetallic research materialshigh-temperature electronics
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Tm2 Cu4 O8

semiconductorTm2 Cu4 O8

Tm₂Cu₄O₈ is a ternary copper oxide ceramic compound containing thulium, belonging to the family of mixed-metal oxides with potential semiconductor or ionic conductor properties. This is a research-phase material primarily studied in solid-state chemistry and materials physics contexts; it is not widely commercialized in mainstream engineering applications. The material's potential relevance lies in emerging fields such as advanced ceramics, solid oxide systems, and functional oxides where copper and rare-earth interactions enable novel electronic or thermal behavior.

experimental ceramic compoundssolid-state physics researchfunctional oxide systems
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Tm2 Fe4

semiconductorTm2 Fe4

Tm₂Fe₄ is an intermetallic compound combining thulium (a rare-earth element) with iron, belonging to the family of rare-earth iron intermetallics. This material is primarily investigated in research contexts for its potential magnetic and electronic properties, rather than as an established industrial commodity. The rare-earth iron intermetallic family is of interest for advanced applications requiring specialized magnetic behavior, high-temperature stability, or unique electronic characteristics, though Tm₂Fe₄ specifically remains largely in the experimental phase without widespread commercial deployment.

magnetic materials researchrare-earth intermetallicshigh-temperature applications
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Tm2 Ga1 Os1

semiconductorTm2 Ga1 Os1

Tm₂GaOs is an intermetallic compound combining rare-earth (thulium), group-13 (gallium), and transition-metal (osmium) elements. This is a research-phase material within the broader family of ternary intermetallics; compounds of this type are typically investigated for their potential in high-temperature structural applications, electronic devices, and thermoelectric systems where the combination of rare-earth and refractory elements may offer unusual combinations of thermal stability and electronic properties. Limited industrial deployment exists; material selection would be driven by specialized applications requiring extreme conditions or novel functional properties rather than cost or established manufacturing infrastructure.

high-temperature structural compoundsthermoelectric researchadvanced electronics
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Tm2 Ga8 Fe1

semiconductorTm2 Ga8 Fe1

Tm₂Ga₈Fe₁ is an intermetallic compound combining thulium (a rare-earth element), gallium, and iron in a defined stoichiometric ratio. This material belongs to the family of rare-earth gallides and represents a research-phase compound studied for its electronic and magnetic properties rather than a widely commercialized engineering material. Intermetallics of this type are investigated for potential applications in high-temperature electronics, thermoelectric devices, and magnetic systems where the rare-earth component can contribute useful magnetic moments or electronic band structure engineering.

rare-earth intermetallics (research)thermoelectric compounds (experimental)magnetic materials development
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Tm2 Ge2

semiconductorTm2 Ge2

Tm2Ge2 is a rare-earth germanide compound belonging to the family of intermetallic semiconductors, where thulium (a lanthanide) combines with germanium in a 1:1 stoichiometric ratio. This material is primarily of research and developmental interest rather than established in high-volume commercial production, with potential applications in thermoelectric devices, optoelectronics, and high-temperature semiconductor systems that leverage rare-earth electronic properties. Engineers would consider Tm2Ge2 where exotic electronic or thermal transport behavior is needed—particularly in specialized applications requiring the unique band structure and phonon interactions that rare-earth germanides offer compared to conventional silicon or gallium arsenide semiconductors.

thermoelectric energy conversionresearch semiconductorshigh-temperature electronics
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Tm2 H6 O6

semiconductorTm2 H6 O6

Tm₂H₆O₆ is a rare-earth hydride oxide compound containing thulium, representing an emerging class of materials in the rare-earth chemistry space. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in specialized semiconductor or photonic devices that exploit rare-earth electronic properties. The compound family is notable for exploring alternative crystal structures and electronic states in rare-earth systems, which could offer advantages in specific niche applications where conventional rare-earth oxides or metals prove limiting.

rare-earth semiconductorsphotonic devices (research)specialized optoelectronics
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Tm2 Hg1 Os1

semiconductorTm2 Hg1 Os1

Tm₂HgOs is an intermetallic compound combining thulium (a rare earth element), mercury, and osmium—a research-phase material that falls within the broader family of rare earth intermetallics and heavy metal compounds. This ternary system is primarily of academic and exploratory interest rather than established in high-volume industrial production; materials of this composition are typically investigated for their electronic, magnetic, or catalytic properties in laboratory settings. Engineers and materials researchers would consider such compounds when seeking unusual combinations of rare earth and refractory metal behavior, though practical deployment remains limited to specialized research applications pending validation of reproducibility, environmental stability, and cost feasibility.

research semiconductorsrare earth intermetallicsexperimental electronic materials
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Tm2 Hg6

semiconductorTm2 Hg6

Tm2Hg6 is an intermetallic compound composed of thulium and mercury, belonging to the family of rare-earth mercury intermetallics. This is a research-phase material studied primarily for its electronic and structural properties rather than as an established engineering material in widespread industrial use. The compound and related rare-earth mercury systems are of academic interest for understanding metallic bonding, potential thermoelectric behavior, and fundamental solid-state physics, though practical applications remain limited and largely exploratory.

thermoelectric researchrare-earth intermetallicssolid-state physics
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Tm2 I2 O2

semiconductorTm2 I2 O2

Tm₂I₂O₂ is a rare-earth oxyiodide semiconductor compound combining thulium, iodine, and oxygen. This is an experimental material of interest primarily in research contexts for optoelectronic and solid-state device applications, rather than a conventional engineering material in widespread industrial use. The rare-earth semiconductor family shows promise for photonic devices, X-ray scintillators, and potential next-generation electronics where unique bandgap properties or luminescent behavior would offer advantages over conventional semiconductors.

research optoelectronicsrare-earth phosphorsX-ray detection
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Tm2 I6

semiconductorTm2 I6

Tm₂I₆ is an inorganic semiconductor compound composed of thulium and iodine, belonging to the rare-earth halide family of materials. This compound is primarily explored in research contexts for optoelectronic and photonic device applications, where rare-earth halides offer tunable bandgaps and potential for infrared emission and detection. Tm₂I₆ is notable within rare-earth iodide semiconductors for its thulium-based luminescence properties, making it of interest for specialized photonic systems, though it remains largely in the developmental stage compared to more established semiconductor platforms.

infrared emitters and detectorsrare-earth photonics researchoptoelectronic devices
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Tm2 In1 Os1

semiconductorTm2 In1 Os1

Tm₂In₁Os₁ is an intermetallic compound combining thulium, indium, and osmium—a rare-earth metal system that belongs to the semiconductor or semimetal family. This is an experimental material primarily of research interest rather than established in mainstream industrial production; such ternary rare-earth intermetallics are investigated for their electronic and magnetic properties that may enable novel device concepts. The combination of osmium (a refractory transition metal) with rare-earth thulium and post-transition metal indium positions this compound for potential applications in high-temperature electronics, topological materials research, or specialized thermoelectric systems where unusual band structure properties could offer advantages over conventional semiconductors.

research materials—quantum & topological propertieshigh-temperature semiconductor applicationsexperimental thermoelectric devices
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Tm2 Ir1 Os1

semiconductorTm2 Ir1 Os1

Tm₂Ir₁Os₁ is an intermetallic semiconductor compound combining thulium, iridium, and osmium—a research-phase material exploring ternary metal systems with potential for high-temperature and high-strength applications. This composition sits at the intersection of rare-earth metallurgy and platinum-group transition metals, making it primarily relevant to advanced materials research rather than established industrial use. The material would be of interest to researchers investigating semiconducting behavior in refractory intermetallics, particularly where corrosion resistance, thermal stability, and mechanical stiffness at elevated temperatures are critical design constraints.

Advanced materials researchHigh-temperature semiconductorsRefractory intermetallics
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Tm2 Ir1 Pd1

semiconductorTm2 Ir1 Pd1

Tm₂IrPd is an intermetallic compound combining rare-earth (thulium), transition metal (iridium), and platinum-group (palladium) elements. This is a research-phase material studied primarily for its electronic and structural properties rather than established commercial applications. Materials in this rare-earth/precious-metal family are of interest for high-performance semiconducting devices, catalytic applications, and specialized electronic components where the combination of thermal stability and electronic tunability offers potential advantages over conventional semiconductors.

experimental semiconductorscatalyst researchhigh-temperature electronics
✓RoHS✓REACH✓Prop 65

Tm2 Ir1 Rh1

semiconductorTm2 Ir1 Rh1

Tm₂Ir₁Rh₁ is an intermetallic compound combining thulium (a rare-earth element) with iridium and rhodium (precious transition metals). This material is primarily of research and exploratory interest rather than established in production; compounds in this family are investigated for potential high-temperature applications, catalytic behavior, and unusual electronic or magnetic properties that arise from the interaction of rare-earth and noble-metal elements.

high-temperature materials researchcatalysis and chemical conversionrare-earth intermetallic studies
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Tm2 Ir1 Ru1

semiconductorTm2 Ir1 Ru1

Tm₂Ir₁Ru₁ is an intermetallic compound combining thulium (a rare-earth element) with iridium and ruthenium (refractory transition metals). This material belongs to the family of rare-earth-based intermetallics and is primarily of research interest rather than established industrial production, with potential applications in high-temperature and specialty electronic devices where rare-earth-transition metal combinations offer unique electronic or magnetic properties.

high-temperature intermetallics researchrare-earth alloy developmentelectronic materials research
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Tm2 Ir4

semiconductorTm2 Ir4

Tm2Ir4 is an intermetallic compound composed of thulium and iridium, belonging to the family of rare-earth transition-metal intermetallics. This material is primarily of research interest rather than established commercial use, with potential applications in high-temperature structural materials, thermoelectric devices, and magnetic systems due to the unique electronic and thermal properties that rare-earth–noble-metal combinations can exhibit.

high-temperature intermetallics (research)thermoelectric materials (experimental)magnetic compounds (rare-earth systems)
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Tm2 Mg1 Al1

semiconductorTm2 Mg1 Al1

Tm₂Mg₁Al₁ is an intermetallic compound combining thulium (a rare-earth element), magnesium, and aluminum. This is a research-phase material rather than an established commercial alloy; it belongs to the rare-earth intermetallic family being investigated for high-performance structural and functional applications where lightweight strength and thermal stability are critical.

aerospace structures (exploratory)high-temperature alloys (research)rare-earth composites
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Tm2 Mg1 In1

semiconductorTm2 Mg1 In1

Tm₂Mg₁In₁ is a ternary intermetallic compound combining thulium (rare earth), magnesium, and indium in a 2:1:1 stoichiometric ratio. This is an experimental research material rather than an established commercial compound; it belongs to the family of rare-earth magnesium intermetallics, which are of interest for their potential as lightweight structural materials and for electronic or photonic applications given indium's semiconductor properties.

Research and developmentRare-earth alloy systemsLightweight structural materials
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Tm2 Mg1 Ir1

semiconductorTm2 Mg1 Ir1

Tm₂MgIr is an intermetallic compound combining thulium (a rare-earth element), magnesium, and iridium. This is a research-stage material studied primarily for its potential electronic and magnetic properties rather than established industrial production. The compound belongs to the family of rare-earth intermetallics, which are investigated for applications requiring specific electronic band structures, magnetic behavior, or catalytic activity; however, Tm₂MgIr remains largely experimental without widespread commercial deployment.

research and developmentrare-earth intermetallicselectronic materials study
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Tm2 Mg1 Os1

semiconductorTm2 Mg1 Os1

Tm₂Mg₁Os₁ is an intermetallic compound combining thulium (rare earth), magnesium (lightweight metal), and osmium (refractory metal). This is a research-phase material with limited commercial application; it belongs to the family of rare-earth containing intermetallics being explored for potential high-temperature structural or functional applications. The combination of a rare earth element with osmium suggests investigation into thermal stability, wear resistance, or electronic/magnetic properties relevant to advanced aerospace or catalytic systems, though specific industrial use cases remain largely experimental.

high-temperature intermetallics (research)rare-earth alloy developmentaerospace advanced materials (exploratory)
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Tm2 Mg1 Ru1

semiconductorTm2 Mg1 Ru1

Tm₂MgRu is an intermetallic compound combining thulium (rare earth), magnesium, and ruthenium in a 2:1:1 stoichiometric ratio. This is a research-phase material within the rare-earth intermetallic family, studied primarily for its potential thermoelectric, magnetic, or catalytic properties rather than established industrial use. The combination of a heavy rare earth (Tm), a lightweight metal (Mg), and a transition metal (Ru) positions it as a candidate for high-temperature energy conversion or advanced functional applications where unconventional phase stability and electronic structure are exploited.

thermoelectric energy conversion (research)rare-earth intermetallics (experimental)high-temperature functional materials
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Tm2 Mg1 Tc1

semiconductorTm2 Mg1 Tc1

Tm₂Mg₁Tc₁ is an experimental ternary intermetallic semiconductor combining thulium, magnesium, and technetium. This rare-earth magnesium compound represents early-stage research into novel semiconductor phases rather than an established commercial material; such compositions are typically investigated for potential applications in high-temperature electronics, quantum materials research, or specialized photonic devices where the rare-earth and transition-metal constituents may enable tunable electronic properties.

research semiconductorsrare-earth intermetallicshigh-temperature electronics
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Tm2 Mg6

semiconductorTm2 Mg6

Tm₂Mg₆ is an intermetallic compound combining thulium (a rare earth element) with magnesium, belonging to the rare earth–magnesium alloy family. This material is primarily of research and experimental interest rather than established production use, studied for potential applications requiring the combination of rare earth strengthening effects with magnesium's low density. The compound represents early-stage exploration into lightweight structural intermetallics and rare earth magnesium systems, with potential relevance to aerospace and high-temperature applications if processing and performance challenges can be overcome.

experimental intermetallic researchlightweight aerospace materialsrare earth magnesium alloys
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Tm2 Mn1 Os1

semiconductorTm2 Mn1 Os1

Tm₂Mn₁Os₁ is an intermetallic compound combining thulium (a rare-earth element), manganese, and osmium. This is a research-stage material rather than an established commercial alloy; compounds of this composition are typically investigated for their potential magnetic, electronic, or catalytic properties arising from the combination of rare-earth, transition-metal, and refractory-metal constituents.

exploratory magnetic materials researchrare-earth intermetallic compoundshigh-temperature applications (potential)
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Tm2 Mo2 Cl2 O8

semiconductorTm2 Mo2 Cl2 O8

Tm₂Mo₂Cl₂O₈ is a mixed-valence transition metal compound combining thulium and molybdenum with chloride and oxide ligands, classified as a semiconductor material likely in the early research phase. This compound family represents exploratory materials chemistry at the intersection of rare-earth and early-transition-metal systems, with potential relevance to solid-state electronics, photocatalysis, or specialized optical applications where the electronic structure of mixed-metal coordination frameworks offers advantages over conventional binary semiconductors. The material remains primarily in the research domain; practical industrial adoption would depend on demonstrating cost-effective synthesis, scalability, and performance advantages in specific device or catalytic roles.

photocatalysis researchsolid-state electronics prototypingrare-earth compound development
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Tm2 Ni12 P7

semiconductorTm2 Ni12 P7

Tm₂Ni₁₂P₇ is a ternary intermetallic compound combining thulium (rare earth), nickel, and phosphorus in a fixed stoichiometric ratio. This material belongs to the rare-earth transition-metal phosphide family, primarily explored in condensed-matter physics and materials research rather than established industrial production. The compound is of interest for its potential electronic, magnetic, and catalytic properties, making it a candidate for fundamental studies in solid-state chemistry and emerging applications in advanced functional materials, though it remains largely in the experimental research stage.

rare-earth functional materialsintermetallic semiconductorscondensed-matter physics research
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Tm2 Ni1 Ir1

semiconductorTm2 Ni1 Ir1

Tm₂NiIr is a ternary intermetallic compound containing thulium, nickel, and iridium—a research-stage semiconductor material being explored for its potential electronic and structural properties. This compound belongs to the broader family of rare-earth transition metal intermetallics, which are investigated for applications requiring thermal stability, electronic functionality, or specialized mechanical behavior at high temperatures. While not yet commercially established, materials in this family are of interest to researchers developing advanced semiconductors, thermal interface materials, and high-performance alloys where rare-earth elements enable unique phase stability or electronic structure.

research semiconductorsrare-earth intermetallicshigh-temperature materials development
✓RoHS✓REACH✓Prop 65

Tm2 Ni1 Os1

semiconductorTm2 Ni1 Os1

Tm₂NiOs is an intermetallic compound combining rare-earth thulium, transition metal nickel, and refractory osmium. This is a research-stage material rather than an established commercial alloy; compounds in this family are studied for potential high-temperature applications and novel electronic or magnetic properties that arise from the specific combination of elements at the atomic level.

experimental thermoelectric materialshigh-temperature intermetallics researchrare-earth alloy development
✓RoHS✓REACH✓Prop 65

Tm2 Ni1 Ru1

semiconductorTm2 Ni1 Ru1

Tm₂NiRu is an intermetallic compound combining thulium (a rare-earth element) with nickel and ruthenium in a 2:1:1 stoichiometry. This is a research-phase material studied primarily for its electronic and magnetic properties rather than a widely deployed commercial alloy. The rare-earth–transition-metal composition positions it within the family of compounds explored for advanced magnetics, thermoelectrics, and quantum materials applications, though it remains largely in the scientific literature rather than production engineering.

rare-earth intermetallics researchmagnetic materials developmentthermoelectric device research
✓RoHS✓REACH✓Prop 65

Tm2 Ni8 B2

semiconductorTm2 Ni8 B2

Tm₂Ni₈B₂ is an intermetallic compound composed of thulium, nickel, and boron, belonging to the rare-earth transition metal boride family. This material is primarily of research and developmental interest rather than established industrial production, being investigated for potential applications in high-temperature structural materials, magnetic devices, and advanced functional materials where the combination of rare-earth and transition metal elements offers tunable electronic and magnetic properties.

high-temperature structural applicationsmagnetic material researchrare-earth intermetallic compounds
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Tm2O3

semiconductor

Tm₂O₃ (thulium oxide) is a rare-earth ceramic semiconductor belonging to the lanthanide oxide family, characterized by high density and significant mechanical stiffness. It is primarily used in specialized optics, phosphor materials for displays and lighting, and as a dopant in laser host crystals—particularly in fiber lasers and solid-state laser systems where its unique optical properties enable efficient energy conversion. Engineers select Tm₂O₃ over conventional semiconductors when rare-earth luminescence, high-temperature stability, or infrared emission capabilities are critical to device performance, though cost and material availability typically limit its use to high-value or research-driven applications.

fiber lasers and amplifierssolid-state laser hostsphosphor materials
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Tm2 Os1 Au1

semiconductorTm2 Os1 Au1

Tm₂Os₁Au₁ is an intermetallic compound combining thulium (a rare-earth element), osmium (a refractory transition metal), and gold in a 2:1:1 stoichiometry. This is a research-phase material with no widespread commercial production; it belongs to the family of rare-earth intermetallics and represents exploratory work in high-entropy or multi-component metal systems. The combination of refractory osmium with precious gold and a rare-earth element suggests investigation into either high-temperature stability, electronic properties, or catalytic behavior—typical motivations for ternary intermetallic research.

research compound / experimental phasehigh-temperature applications (potential)catalysis research
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Tm2 Os1 Pd1

semiconductorTm2 Os1 Pd1

Tm₂OsPd is an intermetallic compound combining thulium (rare earth), osmium (refractory transition metal), and palladium, classified as a semiconductor. This is a research-phase material rather than an established commercial alloy; intermetallics in this composition family are investigated for their potential combination of electronic properties, thermal stability, and catalytic characteristics. The material's appeal lies in exploring how rare earth–noble metal combinations can enable new functionality in high-temperature or specialized electronic applications where conventional semiconductors reach their limits.

experimental intermetallic researchhigh-temperature electronicscatalytic applications
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Tm2 Os1 Rh1

semiconductorTm2 Os1 Rh1

Tm₂Os₁Rh₁ is an experimental intermetallic compound combining thulium (a rare-earth element), osmium (a refractory metal), and rhodium (a precious transition metal). This ternary phase lies in the research domain of high-entropy and multi-principal-element alloys, with potential interest for extreme-environment applications where both thermal stability and electronic properties are critical. Limited to specialized research contexts, this material represents exploration of rare-earth/refractory metal combinations that may offer novel combinations of hardness, corrosion resistance, and electronic behavior.

Research and developmentHigh-temperature materials explorationRare-earth intermetallics
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Tm2 Os1 Ru1

semiconductorTm2 Os1 Ru1

Tm₂Os₁Ru₁ is an experimental intermetallic compound combining thulium (a rare-earth element) with osmium and ruthenium (refractory transition metals), classified as a semiconductor. This material belongs to the family of high-entropy or complex intermetallic phases, which are primarily of research interest for their potential to combine extreme hardness, chemical stability, and unusual electronic properties. While not yet commercialized for mainstream engineering applications, such rare-earth transition-metal compounds are being investigated for next-generation applications requiring materials that can operate in harsh environments or exhibit specialized electronic or catalytic behavior.

research phase materialshigh-temperature applicationscatalytic materials
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Tm2 P10

semiconductorTm2 P10

Tm2P10 is an experimental semiconductor compound in the rare-earth phosphide family, where thulium (Tm) combines with phosphorus (P) in a defined stoichiometric ratio. This material remains primarily in research and development phases, with potential applications in optoelectronics and high-temperature semiconducting devices that leverage rare-earth elements' unique electronic and thermal properties. Engineers would consider rare-earth phosphides for niche applications requiring thermal stability or specific band-gap characteristics that conventional semiconductors cannot provide, though commercial availability and maturity are limited compared to mainstream semiconductor options.

research optoelectronicshigh-temperature semiconductorsrare-earth compounds
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Tm2 Pa2 O8

semiconductorTm2 Pa2 O8

Tm₂Pa₂O₈ is a mixed rare-earth and actinide oxide ceramic compound combining thulium (a lanthanide) with protactinium in an oxidic lattice. This is a specialized research material studied primarily for its nuclear and solid-state properties rather than established commercial applications. The compound represents a niche area of materials chemistry where lanthanide-actinide interactions are explored for fundamental understanding of f-block element behavior, potential nuclear fuel chemistry, or advanced ceramic physics—making it of primary interest to nuclear materials researchers and specialist inorganic chemists rather than mainstream engineering practice.

nuclear materials researchactinide chemistryrare-earth oxide ceramics
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Tm2 Pd1 Pt1

semiconductorTm2 Pd1 Pt1

Tm₂Pd₁Pt₁ is an intermetallic compound combining thulium (a rare-earth element) with palladium and platinum in a 2:1:1 ratio. This is a research-phase material primarily studied for its electronic and potentially thermoelectric properties rather than a widely commercialized engineering material. The ternary rare-earth/noble-metal system is of interest in materials science for fundamental solid-state physics investigations and as a candidate for applications requiring unusual electronic structures or high-temperature stability, though industrial adoption remains limited and specific performance advantages over established alternatives require further characterization.

thermoelectric research materialsrare-earth intermetallic compoundsquantum materials characterization
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Tm2 Pd1 Ru1

semiconductorTm2 Pd1 Ru1

Tm2Pd1Ru1 is a ternary intermetallic compound combining thulium (a rare-earth element), palladium, and ruthenium. This is a research-phase material primarily of interest in fundamental materials science and solid-state physics rather than established industrial production. The rare-earth palladium-ruthenium family is investigated for potential applications in high-temperature structural materials, catalysis, and magnetic or electronic devices, though commercial deployment remains limited and material availability is constrained by rare-earth sourcing.

research intermetallic compoundsrare-earth alloyscatalytic applications
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Tm2 Pt4

semiconductorTm2 Pt4

Tm₂Pt₄ is an intermetallic compound composed of thulium and platinum, belonging to the rare-earth-transition metal class of materials. This is a research-phase compound studied primarily for its potential electronic and magnetic properties rather than established commercial applications. The material represents the broader family of rare-earth platinides, which are of interest in fundamental materials science for understanding intermetallic phase behavior, and potentially in advanced electronics or cryogenic applications where rare-earth-platinum combinations offer unique magnetic or superconducting phenomena.

Research & DevelopmentIntermetallic compoundsRare-earth materials
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Tm2 Ru1 Pt1

semiconductorTm2 Ru1 Pt1

Tm₂RuPt is an intermetallic compound combining rare-earth (thulium), transition metal (ruthenium), and platinum elements, classified as a semiconductor material. This is a research-phase composition studied for its potential in thermoelectric and high-temperature electronic applications, leveraging the thermal and electrical properties that arise from its multi-element intermetallic structure. While not yet widely deployed in production engineering, materials in this family are investigated for applications requiring thermal management, energy conversion, or specialized electronic functions in extreme environments.

thermoelectric deviceshigh-temperature semiconductorsresearch materials science
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