Tm2 Bi2 O6

semiconductor

· Tm2 Bi2 O6

Tm₂Bi₂O₆ is a rare-earth bismuth oxide ceramic compound combining thulium and bismuth in a mixed-valence oxide structure. This material is primarily investigated in research contexts for its potential as a semiconductor with applications in photocatalysis, thermal management, and advanced electronic devices, where the rare-earth and heavy-metal oxide components may provide unique optical and electrical properties distinct from conventional oxides.

photocatalytic applicationssemiconductor researchthermal management systemsoptoelectronic devicesrare-earth oxide engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	114.0	GPa	—
Shear Modulus(G)	41.39	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.178	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.619	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm2 Bi2 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control