ZrSe2 is a layered transition metal dichalcogenide semiconductor composed of zirconium and selenium atoms. It belongs to the broader family of two-dimensional materials that can be mechanically exfoliated into thin layers, making it of significant interest for nanoelectronics and optoelectronics research. While primarily in the research and development phase rather than established industrial production, ZrSe2 is being investigated for applications requiring tunable electronic band gaps, direct bandgap behavior in monolayer form, and compatibility with van der Waals heterostructure engineering—offering potential advantages over more widely studied materials like MoS2 in specific high-performance device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 17.51 | GPa | — | ||
| ↳ | 37.57 | GPa | — | ||
Exfoliation Energy(Eexf) | 95.44 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G)2 entries | 11.57 | GPa | — | ||
| ↳ | 27.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.355 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.000 | eV | — | ||
| ↳ | 0.3370 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 58.33 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -259.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01550 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.401 | eV/atom | — |