ZrS₃ is a layered transition metal trichalcogenide semiconductor composed of zirconium and sulfur, belonging to the family of two-dimensional (2D) materials with sheet-like crystal structures. This is primarily a research material currently under investigation for next-generation electronic and optoelectronic applications, rather than an established industrial compound. The layered structure and semiconducting properties make it of interest for potential applications in nanoelectronics, photovoltaics, and sensing devices where the ability to exfoliate into thin layers could enable new device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 22.18 | GPa | DFT | ||
| ↳ | 45.74 | GPa | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 55.49 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G)2 entries | 11.05 | GPa | DFT | ||
| ↳ | 28.19 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.676 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.206 | eV | DFT · OptB88vdW | ||
| ↳ | 1.561 | eV | DFT · TBmBJ | ||
| ↳ | 2.170 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.972 | - | DFT · OptB88vdW | ||
| ↳ | 8.034 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 1.937 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.913 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00141 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00172 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -196.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 319.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 31.49 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.357 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data