ZrMn6Ga2Sn4 is an intermetallic compound in the zirconium-manganese-gallium-tin system, combining transition metals with semiconductive elements to create a complex crystalline structure. This material is primarily of research and development interest rather than established commercial production, with potential applications in magnetism, thermoelectric devices, and functional materials where the intermetallic phase structure provides unique electronic or magnetic properties. The specific composition suggests investigation into materials that balance magnetic characteristics (manganese content) with thermal or electronic functionality, making it relevant for advanced materials research where conventional binary or ternary alloys are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2866 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1063 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.01992 | eV/atom | — |