ZrInO2N
semiconductor· ZrInO2N
ZrInO₂N is an experimental oxynitride semiconductor compound combining zirconium, indium, oxygen, and nitrogen elements. This material belongs to the family of transition metal oxynitrides, which are being actively researched for photocatalytic and optoelectronic applications due to their tunable bandgap and potential for visible-light activity. The incorporation of nitrogen into the zirconium-indium oxide lattice is designed to narrow the bandgap compared to conventional oxides, making it potentially useful in photocatalysis, photoelectrochemistry, and next-generation semiconductor devices.
photocatalysis researchvisible-light water splittingsemiconductor device developmentenvironmental remediationthin-film optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.