ZrInO2N — Properties & Data | MatWorld

ZrInO2N

semiconductor

· ZrInO2N

ZrInO₂N is an experimental oxynitride semiconductor compound combining zirconium, indium, oxygen, and nitrogen elements. This material belongs to the family of transition metal oxynitrides, which are being actively researched for photocatalytic and optoelectronic applications due to their tunable bandgap and potential for visible-light activity. The incorporation of nitrogen into the zirconium-indium oxide lattice is designed to narrow the bandgap compared to conventional oxides, making it potentially useful in photocatalysis, photoelectrochemistry, and next-generation semiconductor devices.

photocatalysis researchvisible-light water splittingsemiconductor device developmentenvironmental remediationthin-film optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000417	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.040	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZrInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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