Zr4As8 is an intermetallic semiconductor compound in the zirconium-arsenic system, representing a research-phase material rather than an established commercial product. This compound belongs to the family of transition metal arsenides, which are investigated for potential applications in thermoelectric devices, optoelectronics, and high-temperature semiconductor applications due to their tunable electronic properties and thermal characteristics. The material's utility would depend on its ability to compete with more mature semiconductor systems in niche applications requiring specific thermal or electrical performance windows.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,031.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 10,410.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8580 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data