Zr2 Te6
semiconductorZr₂Te₆ is a layered transition metal telluride semiconductor compound belonging to the family of zirconium tellurides, which are primarily of research interest for advanced electronic and optoelectronic applications. This material is largely experimental, studied for potential use in next-generation semiconducting devices, thermoelectric systems, and 2D material applications where the layered crystal structure can be exploited. Its appeal lies in the combination of zirconium's chemical stability with tellurium's semiconducting properties, offering a platform for investigating tunable electronic behavior in materials systems that may eventually compete with or complement conventional semiconductors in specialized applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |