Zr₂Sn₂Te₂ is an intermetallic semiconductor compound combining zirconium, tin, and tellurium in a layered or complex crystal structure. This is a research-phase material rather than an established commercial compound; it belongs to the family of transition metal chalcogenides and mixed-metal tellurides being explored for thermoelectric, optoelectronic, and topological properties. Engineers investigating advanced semiconductors, particularly those seeking materials with tunable band gaps or enhanced phonon scattering for energy conversion, would evaluate this compound as a candidate where conventional III-V or II-VI semiconductors fall short in cost, toxicity, or performance trade-offs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 83.31 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 54.43 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01290 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6980 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data