Zr₂Si₂Te₂ is an experimental ternary compound semiconductor combining zirconium, silicon, and tellurium elements. This layered material belongs to the family of transition-metal dichalcogenides and related ternary semiconductors under investigation for next-generation optoelectronic and thermal management applications. While not yet commercialized at scale, compounds in this material class are being explored for their tunable bandgap properties, potential for high-temperature stability, and integration into heterostructure devices where traditional binary semiconductors face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 64.50 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 48.78 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02000 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7940 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data