Zr₂Si₂S₂ is a layered ternary semiconductor compound combining zirconium, silicon, and sulfur in a stoichiometric ratio. This material belongs to the family of transition metal chalcogenides and represents an emerging research compound with potential applications in optoelectronics and energy storage, though it remains primarily in the experimental phase rather than established industrial production. The layered structure and semiconductor character make it a candidate for next-generation devices where two-dimensional material properties or band gap engineering are advantageous over conventional silicon or III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,674.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 13,072.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00330 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.280 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data