Zr₂S₆ is a layered transition metal sulfide semiconductor compound belonging to the zirconium chalcogenide family, characterized by strong covalent bonding within layers. This material is primarily of research interest for optoelectronic and energy storage applications, where its semiconducting properties and structural characteristics make it a candidate for next-generation devices such as photodetectors, photocatalysts, and battery electrodes, though it remains largely in the experimental phase compared to more established semiconductor systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45.74 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 28.19 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.206 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.357 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data