Zr₂S₂ is a layered transition metal dichalcogenide semiconductor combining zirconium and sulfur, representing an emerging class of two-dimensional materials under active research. While not yet widely deployed in commercial applications, this compound is investigated for potential use in electronic and optoelectronic devices where its layered crystal structure and semiconducting properties could enable novel functionality in thin-film transistors, photodetectors, and energy storage systems. Zr₂S₂ belongs to a family of materials attracting significant attention as alternatives to graphene and MoS₂ for next-generation nanoelectronics due to its tunable bandgap and mechanical flexibility.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,261.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 9,109.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01560 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.589 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data