Zr₂Ni₈As₄ is an intermetallic semiconductor compound combining zirconium, nickel, and arsenic in a fixed stoichiometric ratio. This material belongs to the family of ternary intermetallic semiconductors and is primarily of research and experimental interest rather than an established industrial material. The compound's potential applications leverage intermetallic semiconductors' unique electronic properties—particularly their tunable band gaps and thermal stability—making it relevant for investigation in next-generation thermoelectric devices, high-temperature electronics, and specialized optoelectronic applications where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01150 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5130 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data