Zr₂I₂N₂ is a rare-earth zirconium oxynitride halide compound belonging to the ceramic semiconductor family, synthesized primarily in research settings to explore novel electronic and thermal properties in layered nitride systems. This experimental material is of interest to the materials science community for investigating wide-bandgap semiconductors and refractory ceramic applications, though industrial deployment remains limited; its potential lies in high-temperature electronics, advanced ceramics, and fundamental studies of metal-halide-nitride phase chemistry where thermal stability and electronic isolation are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.333 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.544 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data