Zr₁Zn₁O₃ is an experimental ternary oxide semiconductor compound combining zirconium, zinc, and oxygen. This material belongs to the mixed-metal oxide family and is primarily of research interest for next-generation electronic and photonic applications, where its semiconducting properties and potential for wide bandgap performance make it a candidate for high-temperature or high-energy device applications. Unlike single-component oxides, ternary formulations like this offer tunable electronic properties through compositional control, positioning it in the broader context of engineered oxide semiconductors for power electronics, UV detection, or transparent conducting layers.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,287.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 8,420.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1556 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.096 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data