Zr1 Zn1 O3

semiconductor
· Zr1 Zn1 O3

Zr₁Zn₁O₃ is an experimental ternary oxide semiconductor compound combining zirconium, zinc, and oxygen. This material belongs to the mixed-metal oxide family and is primarily of research interest for next-generation electronic and photonic applications, where its semiconducting properties and potential for wide bandgap performance make it a candidate for high-temperature or high-energy device applications. Unlike single-component oxides, ternary formulations like this offer tunable electronic properties through compositional control, positioning it in the broader context of engineered oxide semiconductors for power electronics, UV detection, or transparent conducting layers.

Wide-bandgap semiconductors (R&D)High-temperature electronicsTransparent conductive oxide layersUV photodetectors (research)Power device substrates (experimental)Thin-film electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
ksi
Shear Modulus(G)
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.