Zr₁Zn₁N₂ is an experimental ternary nitride semiconductor compound combining zirconium, zinc, and nitrogen. This material belongs to the family of transition metal nitrides, which are under investigation for wide-bandgap semiconductor applications where conventional semiconductors reach thermal or performance limits. Research on such ternary nitride systems focuses on potential applications in high-temperature electronics, optoelectronics, and power devices, though this specific composition remains primarily in the research phase and is not yet established in mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 182.6 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 89.89 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.156 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.079 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data