Zr1 Ta1 N1 O1
semiconductor· Zr1 Ta1 N1 O1
Zr₁Ta₁N₁O₁ is an experimental mixed-metal ceramic compound combining refractory zirconium and tantalum with nitrogen and oxygen, placing it in the high-entropy or complex oxide-nitride family of advanced ceramics. This material is primarily of research interest for its potential in high-temperature structural applications and specialty semiconductor devices, where the combination of refractory metals and interstitial nitrogen/oxygen phases may offer enhanced thermal stability and electronic properties compared to conventional binary nitrides or oxides.
high-temperature coatingsrefractory componentsadvanced semiconductor researchthermal barrier materialselectronic device development
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.