Zr1Os1 is an intermetallic compound combining zirconium and osmium, classified as a semiconductor material. This compound represents an emerging research material in the intermetallic family, studied for potential applications requiring high-temperature stability and unique electronic properties that osmium-containing systems can provide. The zirconium-osmium system is primarily explored in materials science research contexts rather than established commercial production, with potential relevance to applications demanding exceptional mechanical rigidity combined with semiconductor behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30,583.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 14,199.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02910 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6380 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data