Zr1In3 is an intermetallic semiconductor compound composed of zirconium and indium in a 1:3 stoichiometric ratio. This material belongs to the family of transition metal-indium intermetallics, which are primarily of research interest for their electronic and structural properties. Zr1In3 and related compounds are investigated in laboratory settings for potential applications in thermoelectric devices, semiconductor electronics, and high-temperature structural applications where the combination of metallic bonding and semiconducting behavior may offer advantages over conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 77.03 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 49.72 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00800 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2080 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data