Zr1 Hg1 O3
semiconductor· Zr1 Hg1 O3
Zr₁Hg₁O₃ is an experimental mixed-metal oxide semiconductor compound containing zirconium and mercury in a perovskite-related structure. This material exists primarily in academic research contexts as part of investigations into novel oxide semiconductors and their electronic properties, rather than as an established industrial material. Research on mercury-containing oxides focuses on understanding structure-property relationships in complex metal oxides, though practical applications remain limited due to mercury's toxicity concerns and the scarcity of commercial development.
research and developmentsemiconductor physics studiesoxide materials characterizationexploratory electronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.