Zr1 Hg1 O3 — Properties & Data | MatWorld

Zr1 Hg1 O3

semiconductor

· Zr1 Hg1 O3

Zr₁Hg₁O₃ is an experimental mixed-metal oxide semiconductor compound containing zirconium and mercury in a perovskite-related structure. This material exists primarily in academic research contexts as part of investigations into novel oxide semiconductors and their electronic properties, rather than as an established industrial material. Research on mercury-containing oxides focuses on understanding structure-property relationships in complex metal oxides, though practical applications remain limited due to mercury's toxicity concerns and the scarcity of commercial development.

research and developmentsemiconductor physics studiesoxide materials characterizationexploratory electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2139	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.030	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zr1 Hg1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control