ZnYBiO4 is an ternary oxide semiconductor composed of zinc, yttrium, and bismuth, belonging to the family of complex metal oxides under investigation for optoelectronic and photocatalytic applications. This material is primarily explored in research settings rather than established commercial production, with potential relevance to photocatalysis, visible-light-driven environmental remediation, and possibly thin-film electronic devices. The inclusion of bismuth—known for its narrow bandgap and visible-light absorption—makes this compound of interest as an alternative to traditional wide-bandgap semiconductors where enhanced light absorption or photocatalytic activity is desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.580 | eV | — |