ZnTiOFN

semiconductor

· ZnTiOFN

ZnTiOFN is a ternary oxide-nitride semiconductor compound combining zinc, titanium, oxygen, and nitrogen elements into a mixed-anion crystal structure. This material remains primarily in the research and development phase, investigated for its potential to engineer bandgap properties and enhance photocatalytic or electronic performance beyond conventional single-phase oxides. Interest centers on photocatalysis, optoelectronics, and energy conversion applications where the nitrogen incorporation can improve visible-light absorption and charge carrier dynamics compared to oxide-only alternatives.

photocatalytic water splittingvisible-light photocatalysisthin-film optoelectronicsenvironmental remediationnext-generation semiconductor researchsolar energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.566e-15	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnTiOFN — Properties & Data | MatWorld

ZnTiOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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