ZnTe — Properties & Data | MatWorld

ZnTe

semiconductor

· ZnTe

Zinc telluride (ZnTe) is a II-VI compound semiconductor with a zinc blende crystal structure, notable for its wide direct bandgap and strong nonlinear optical properties. It is primarily used in optoelectronic and photonic applications, particularly for infrared detectors, electroluminescent devices, and as a substrate or buffer layer in heterostructure devices operating in the visible-to-infrared spectrum. Engineers select ZnTe when direct bandgap semiconductors are required for efficient light emission or detection, or when lattice matching with other compound semiconductors is critical for quantum well and superlattice device designs.

infrared detectors and imagingelectroluminescent displaysoptoelectronic device substratesnonlinear optical applicationsquantum well heterostructuresx-ray and gamma-ray detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)3 entries	6,669.1	ksi	—
↳	6,669.1	ksi	—
↳	6,574.6	ksi	—
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	—
Elastic Anisotropy(AU)	0.5883	-	—
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	ksi	—
Poisson's Ratio(ν)2 entries	0.2902	-	—
↳	0.2900	-	—
Shear Modulus(G)3 entries	3,253.5	ksi	—
↳	3,253.5	ksi	—
↳	3,379.4	ksi	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	10.92	BTU/(hr·ft·°F)	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1978	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)2 entries	2.180	eV	—
↳	1.057	eV	—
Dielectric Constant (Relative Permittivity)(εr)3 entries	11.52	-	—
↳	12.73	-	—
↳	10.87 range 9.642–12.09median of 2 measurements	-	—
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	—
Total Dielectric Tensor(ε)	Matrix (redacted)	-	—
Magnetic Moment(μB)	0.000	µB	—
Piezoelectric Modulus(eij)2 entries	0.06888	C/m²	—
↳	0.6832	C/m²	—
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	—
Seebeck Coefficient(S)	-50.48	µV/K	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00990	eV/atom	—
Formation Energy(ΔHf)2 entries	-0.6177	eV/atom	—
↳	-0.4589	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.