Zinc telluride (ZnTe) is a II-VI compound semiconductor with a zinc blende crystal structure, notable for its wide direct bandgap and strong nonlinear optical properties. It is primarily used in optoelectronic and photonic applications, particularly for infrared detectors, electroluminescent devices, and as a substrate or buffer layer in heterostructure devices operating in the visible-to-infrared spectrum. Engineers select ZnTe when direct bandgap semiconductors are required for efficient light emission or detection, or when lattice matching with other compound semiconductors is critical for quantum well and superlattice device designs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 45.98 | GPa | DFT | ||
| ↳ | 45.33 | GPa | DFT · OptB88vdW | ||
| ↳ | 45.98 | GPa | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.5883 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.2900 | - | DFT · OptB88vdW | ||
| ↳ | 0.2902 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 22.43 | GPa | DFT | ||
| ↳ | 23.30 | GPa | DFT · OptB88vdW | ||
| ↳ | 22.43 | GPa | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 18.90 | W/(m·K) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.474 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.180 | eV | Measured | ||
| ↳ | 1.057 | eV | DFT · OptB88vdW | ||
| ↳ | 2.233 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 12.73 | - | DFT · OptB88vdW | ||
| ↳ | 11.52 | - | DFT · PBE | ||
| ↳ | 10.87 range 9.642–12.09median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.701 | - | DFT · OptB88vdW | ||
| ↳ | 6.860 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.1000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.6600 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.6832 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.06888 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000367 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00338 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -50.48 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 267.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 18.02 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00990 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.4589 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.6177 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data