ZnSnSb₂ is a ternary semiconductor compound combining zinc, tin, and antimony elements, belonging to the family of III-V and related semiconductor materials. This material is primarily investigated in research settings for thermoelectric and optoelectronic applications, where its electronic band structure and thermal properties offer potential advantages in energy conversion and light-emitting devices. Engineers would consider ZnSnSb₂ when designing next-generation thermoelectric generators or specialized semiconductor devices that require tunable electronic properties unavailable in conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 40.41 | GPa | — | ||
| ↳ | 40.41 | GPa | — | ||
| ↳ | 41.83 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.5206 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2618 | - | — | ||
| ↳ | 0.2800 | - | — | ||
Shear Modulus(G)3 entries | 22.88 | GPa | — | ||
| ↳ | 22.88 | GPa | — | ||
| ↳ | 22.56 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.464 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -150.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00430 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.04823 | eV/atom | — |