ZnSnSb₂ is a ternary semiconductor compound combining zinc, tin, and antimony elements, belonging to the family of III-V and related semiconductor materials. This material is primarily investigated in research settings for thermoelectric and optoelectronic applications, where its electronic band structure and thermal properties offer potential advantages in energy conversion and light-emitting devices. Engineers would consider ZnSnSb₂ when designing next-generation thermoelectric generators or specialized semiconductor devices that require tunable electronic properties unavailable in conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 40.41 | GPa | DFT | ||
| ↳ | 41.83 | GPa | DFT · OptB88vdW | ||
| ↳ | 40.41 | GPa | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.5206 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.2800 | - | DFT · OptB88vdW | ||
| ↳ | 0.2618 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 22.88 | GPa | DFT | ||
| ↳ | 22.56 | GPa | DFT · OptB88vdW | ||
| ↳ | 22.88 | GPa | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.464 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.4000 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.2610 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 17.08 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00368 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00204 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -150.4 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 170.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.840 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00430 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.04823 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data