ZnSnO3 is a ternary oxide semiconductor compound combining zinc and tin oxides, belonging to the wider family of metal oxide semiconductors used in electronic and photonic applications. While primarily investigated in research contexts for its semiconducting properties, this material shows promise in transparent electronics, gas sensing, and photocatalytic applications where the combined effects of zinc and tin oxides can be leveraged. Its potential advantage over binary alternatives (such as ZnO or SnO2 alone) lies in tunable bandgap and enhanced functional properties achievable through the ternary oxide structure, making it of interest for next-generation optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 156.7 | GPa | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 60.86 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.535 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.900 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 1.539 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 26.00 | - | — | ||
Magnetic Moment(μB)2 entries | -0.0000462 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.5802 | C/m² | — | ||
| ↳ | 0.04774 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -62.46 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05500 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.124 | eV/atom | — | ||
| ↳ | 0.5000 | eV/atom | — | ||
| ↳ | -1.659 | eV/atom | — |