ZnSnO2S — Properties & Data | MatWorld

ZnSnO2S

semiconductor

· ZnSnO2S

ZnSnO₂S is a quaternary semiconductor compound combining zinc, tin, oxygen, and sulfur—a mixed-metal oxide-sulfide material in the family of wide-bandgap semiconductors. This is primarily a research material of interest for optoelectronic and photocatalytic applications, where its tunable bandgap and heteroanionic structure offer potential advantages over binary alternatives like ZnO or SnO₂. Current exploration focuses on thin-film photovoltaics, visible-light photocatalysis, and UV detection, where the oxygen-sulfur mixing is expected to modify electronic structure and carrier dynamics compared to conventional transparent conducting oxides or sulfide semiconductors.

photovoltaic absorber layersphotocatalytic water treatmentUV photodetectorstransparent conducting filmsthin-film optoelectronicsresearch-phase material

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000154	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnSnO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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