ZnSnN₃ is an experimental ternary nitride ceramic compound combining zinc, tin, and nitrogen in a crystalline structure. This material belongs to the family of wide-bandgap semiconductors and nitride ceramics, which are actively researched for next-generation optoelectronic and high-temperature applications. As a relatively nascent compound, ZnSnN₃ is primarily investigated in academic and industrial research settings for potential use in photovoltaics, photoelectrochemistry, and semiconductor devices where wide bandgap and nitrogen incorporation offer advantages over conventional binary nitrides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 3.149 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.040 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data