ZnSnAs2
semiconductorZnSnAs2 is a III-V ternary semiconductor compound composed of zinc, tin, and arsenic, belonging to the family of chalcopyrite-structure semiconductors. This material is primarily of research and development interest for optoelectronic and photovoltaic applications, particularly in infrared detection and conversion devices where its direct bandgap and lattice properties offer potential advantages over simpler binary semiconductors. While not yet widely commercialized compared to established materials like GaAs or InP, ZnSnAs2 is investigated in specialized contexts where its specific electronic and optical characteristics—suited for mid-to-long wavelength infrared operation—could enable high-performance detectors, solar cells, or emitters in niche aerospace and remote sensing applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — median of 2 measurements | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |