ZnSnAs2 — Properties & Data | MatWorld

ZnSnAs2

Name: ZnSnAs2
Brand: MatWorld

semiconductor

· ZnSnAs2

ZnSnAs2 is a III-V ternary semiconductor compound composed of zinc, tin, and arsenic, belonging to the family of chalcopyrite-structure semiconductors. This material is primarily of research and development interest for optoelectronic and photovoltaic applications, particularly in infrared detection and conversion devices where its direct bandgap and lattice properties offer potential advantages over simpler binary semiconductors. While not yet widely commercialized compared to established materials like GaAs or InP, ZnSnAs2 is investigated in specialized contexts where its specific electronic and optical characteristics—suited for mid-to-long wavelength infrared operation—could enable high-performance detectors, solar cells, or emitters in niche aerospace and remote sensing applications.

infrared photodetectorsphotovoltaic researchoptoelectronic devicesspace/aerospace sensingexperimental semiconductorsnarrow-bandgap applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	55.10	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2700	-	DFT · OptB88vdW
Shear Modulus(G)	31.14	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.299	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.9000	eV	Measured
↳	0.00200	eV	DFT · OptB88vdW
↳	0.8030	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	19.16	-	DFT · OptB88vdW
↳	11.66	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00203	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00252	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-113.6	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	217.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	26.37	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00390	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1750	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnSnAs2

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