ZnSiP₂ is a III–V semiconductor compound combining zinc, silicon, and phosphorus in a chalcopyrite crystal structure, positioned between traditional binary semiconductors and more complex ternary systems. It has been investigated primarily in research contexts for optoelectronic and photovoltaic applications, particularly where direct bandgap properties and lattice-matched growth on alternative substrates could offer advantages over conventional GaAs or InP semiconductors. The material is notable for potential use in high-efficiency solar cells, light-emitting devices, and radiation-hard electronics, though commercial deployment remains limited compared to more mature III–V alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 84.27 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 55.96 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.315 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.070 | eV | — | ||
| ↳ | 1.428 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 12.42 | - | — | ||
| ↳ | 12.45 | - | — | ||
| ↳ | 11.72 range 10.91–12.53median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.03189 | C/m² | — | ||
| ↳ | 0.6988 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -191.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3386 | eV/atom | — |