ZnSiP2 — Properties & Data | MatWorld

ZnSiP2

Name: ZnSiP2
Brand: MatWorld

semiconductor

· ZnSiP2

ZnSiP₂ is a III–V semiconductor compound combining zinc, silicon, and phosphorus in a chalcopyrite crystal structure, positioned between traditional binary semiconductors and more complex ternary systems. It has been investigated primarily in research contexts for optoelectronic and photovoltaic applications, particularly where direct bandgap properties and lattice-matched growth on alternative substrates could offer advantages over conventional GaAs or InP semiconductors. The material is notable for potential use in high-efficiency solar cells, light-emitting devices, and radiation-hard electronics, though commercial deployment remains limited compared to more mature III–V alternatives.

photovoltaic cellsoptoelectronic deviceshigh-energy radiation detectorsresearch semiconductorsthin-film solar applicationswide-bandgap electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	84.27	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	55.96	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	3.315	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.070	eV	Measured
↳	1.428	eV	DFT · OptB88vdW
↳	2.027	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	12.45	-	DFT · OptB88vdW
↳	12.42	-	DFT · PBE
↳	11.72 range 10.91–12.53median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.577	-	DFT · TBmBJ
↳	11.00	-	DFT · OptB88vdW
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.4267	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.9733	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.6988	C/m²	DFT · OptB88vdW
↳	0.03189	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00244	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00196	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-191.6	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	235.7	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	22.38	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.3386	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnSiP2

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