ZnSiAs2 — Properties & Data | MatWorld

ZnSiAs2

Name: ZnSiAs2
Brand: MatWorld

semiconductor

· ZnSiAs2

ZnSiAs2 is a ternary III-V compound semiconductor composed of zinc, silicon, and arsenic elements. It belongs to the family of wide-bandgap semiconductors and is primarily of research and development interest rather than a mature commercial material. This material is investigated for potential applications in high-frequency electronics, optoelectronics, and radiation-hard devices where its unique electronic properties could offer advantages over binary alternatives, though reproducible synthesis and device integration remain active research challenges.

High-frequency semiconductor researchOptoelectronic device developmentRadiation-tolerant electronicsAdvanced compound semiconductor studiesExperimental solar cell researchWide-bandgap device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	65.88	GPa	DFT
Shear Modulus(G)	42.19	GPa	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.541	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.120	eV	Measured
↳	0.8810	eV	DFT · OptB88vdW
↳	1.852	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	16.07	-	DFT · OptB88vdW
↳	15.29	-	DFT · PBE
↳	14.33 range 13.58–15.09median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	13.81	-	DFT · OptB88vdW
↳	9.336	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.08333	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.5500	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.6931	C/m²	DFT · OptB88vdW
↳	0.06149	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00347	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00274	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-165.1	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	238.1	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	26.21	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1817	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnSiAs2

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