ZnSiAs2 is a ternary III-V compound semiconductor composed of zinc, silicon, and arsenic elements. It belongs to the family of wide-bandgap semiconductors and is primarily of research and development interest rather than a mature commercial material. This material is investigated for potential applications in high-frequency electronics, optoelectronics, and radiation-hard devices where its unique electronic properties could offer advantages over binary alternatives, though reproducible synthesis and device integration remain active research challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.88 | GPa | — | ||
Shear Modulus(G) | 42.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.541 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.120 | eV | — | ||
| ↳ | 0.8810 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 15.29 | - | — | ||
| ↳ | 16.07 | - | — | ||
| ↳ | 14.33 range 13.58–15.09median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.06149 | C/m² | — | ||
| ↳ | 0.6931 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -165.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1817 | eV/atom | — |