ZnSiAg₂S₄ is a quaternary semiconductor compound combining zinc, silicon, silver, and sulfur elements, belonging to the metal chalcogenide family. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its mixed-metal sulfide structure offers potential for tunable electronic properties and light absorption characteristics. The incorporation of silver and the quaternary composition distinguish it from simpler binary or ternary sulfides, making it a candidate for next-generation thin-film solar cells, photodetectors, or other emerging semiconductor device architectures where conventional materials have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1549 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.652 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5365 | eV/atom | — |