ZnSbAs is a ternary III-V semiconductor ceramic compound combining zinc, antimony, and arsenic elements. This material belongs to the family of zinc-based chalcogenide and pnictide semiconductors, typically investigated for optoelectronic and photonic device applications where tunable bandgaps and direct band structures are advantageous. ZnSbAs remains primarily a research-phase material rather than a high-volume industrial compound; its development is driven by interest in wide-bandgap semiconductors for specialized infrared detectors, high-frequency electronics, and potential thermoelectric applications where conventional III-V materials (GaAs, InP) may not provide the required performance window.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1.010 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | -4.450 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.933 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2368 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1450 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data