ZnLaO3 — Properties & Data | MatWorld

ZnLaO3

semiconductor

· ZnLaO3

ZnLaO3 is a mixed-metal oxide semiconductor compound combining zinc and lanthanum, belonging to the family of wide-bandgap oxide semiconductors. This material is primarily investigated in research contexts for transparent electronics, optoelectronic devices, and gas-sensing applications, where its combination of optical transparency and semiconducting behavior offers potential advantages over conventional materials like indium tin oxide (ITO) or zinc oxide alone.

transparent conducting filmsoptoelectronic devicesgas sensorsthin-film transistorsUV photodetectorsresearch/development phase

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	DFT · GLLB-SC
↳	0.6560	eV	DFT · PBE
Magnetic Moment(μB)2 entries	0.2000	μB	DFT
↳	1.237	μB	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-2.333	eV/atom	DFT
↳	1.460	eV/atom	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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ZnLaO3

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