ZnInS is a ternary chalcogenide ceramic compound combining zinc, indium, and sulfur, belonging to the family of wide-bandgap semiconductors. It is primarily of research and developmental interest for optoelectronic and photonic applications where its semiconductor properties enable photon emission and detection across infrared to visible wavelengths. The material is notable for potential use in specialized optoelectronic devices where compound semiconductors outperform simpler alternatives, though it remains less established in production than binary zinc sulfide or indium phosphide systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,892.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | -2,062.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1799 range 0.1707–0.1891median of 2 measurements | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6168 range 0.4536–0.7800median of 2 measurements | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.02383 range -0.1394–0.1870median of 2 measurements | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data