ZnIn₃AsSe₄ is a quaternary semiconductor ceramic compound belonging to the I-III-V₂-VI family of materials, combining zinc, indium, arsenic, and selenium in a mixed-anion chalcogenide structure. This is a research-phase material explored primarily for infrared optics, photonic devices, and nonlinear optical applications where its tunable bandgap and crystal properties offer potential advantages over binary or ternary alternatives. The material's defect chemistry and optoelectronic characteristics make it of interest in specialized photonic systems, though it remains largely in development rather than widespread commercial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.233 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6190 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 11.10 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5147 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data