ZnIn2S4 is a ternary semiconductor compound belonging to the I–III–VI family, combining zinc, indium, and sulfur in a fixed stoichiometric ratio. This material is primarily investigated in photocatalysis and optoelectronic device research, where its tunable bandgap and layered crystal structure make it attractive for photodegradation of pollutants, photovoltaic applications, and light-emission devices. While not yet widely commercialized at industrial scale, ZnIn2S4 represents a promising alternative to more common semiconductors in applications where cost, toxicity, or performance trade-offs with lead-based or cadmium-based compounds need to be optimized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.83 | GPa | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 31.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.565 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.680 | eV | — | ||
| ↳ | 1.153 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 51.82 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1854 | C/m² | — | ||
Seebeck Coefficient(S) | -66.50 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6923 | eV/atom | — |