ZnHfO2S — Properties & Data | MatWorld

ZnHfO2S

semiconductor

· ZnHfO2S

ZnHfO₂S is an experimental ternary oxide-sulfide semiconductor compound combining zinc, hafnium, and sulfur elements. This material belongs to the emerging class of mixed-anion semiconductors under active research for next-generation optoelectronic and photocatalytic applications, where the sulfide incorporation may tune bandgap and carrier dynamics compared to conventional oxides like HfO₂.

photocatalysis and water treatmentthin-film transistorsUV/visible photodetectorsheterojunction solar cellsresearch-stage optoelectronicsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.0000231	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnHfO2S

Electrical Properties

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Regulatory Screening

Environmental

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