ZnGeS is a ternary II–IV–VI semiconductor ceramic compound combining zinc, germanium, and sulfur. This material belongs to the family of wide-bandgap semiconductors and is primarily of research and specialized-application interest rather than a commodity engineering material. ZnGeS is investigated for optoelectronic and photonic applications—particularly infrared detection, nonlinear optical devices, and solid-state laser systems—where its direct bandgap and optical transparency in the mid- to far-infrared range offer advantages over conventional alternatives like ZnSe or GaAs in specific wavelength windows.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1833 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7690 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1777 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data