ZnGeS₂ is a ternary chalcogenide ceramic compound belonging to the family of II-IV-VI semiconductors, combining zinc, germanium, and sulfur in a crystalline structure. This material is primarily investigated in research and emerging photonic applications, particularly for infrared (IR) optics, nonlinear optical devices, and wide-bandgap semiconductor research where its lattice structure and optical transparency in the IR spectrum offer advantages over binary alternatives. Engineers and researchers select ZnGeS₂ when designing components requiring transparency in mid-to-far infrared wavelengths or exploring compound semiconductors with tunable electronic properties, though availability and manufacturing scale remain limited compared to established ceramic materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,676.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,561.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1635 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1813 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4419 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data