ZnGeP₂ is a II-IV-V₂ compound semiconductor with a direct bandgap, belonging to the chalcopyrite crystal family. It is primarily used in nonlinear optical and infrared photonic applications, where its combination of wide transparency window and strong nonlinear optical coefficients makes it valuable for frequency conversion and mid-infrared laser systems. The material is notably harder and more chemically stable than alternative infrared crystals like CdGeAs₂, making it preferred for demanding optical environments, though it remains more specialized and less mature than conventional semiconductors like GaAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 74.92 | GPa | — | ||
| ↳ | 73.99 | GPa | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G)2 entries | 48.92 | GPa | — | ||
| ↳ | 50.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.031 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.340 | eV | — | ||
| ↳ | 1.054 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 15.29 | - | — | ||
| ↳ | 13.39 range 12.61–14.17median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.05073 | C/m² | — | ||
| ↳ | 0.6880 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -210.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2317 | eV/atom | — |