ZnGeON2 — Properties & Data | MatWorld

ZnGeON2

ceramic

· ZnGeON2

ZnGeON2 is an oxynitride ceramic compound combining zinc, germanium, oxygen, and nitrogen—a ternary/quaternary system that bridges traditional oxides and nitrides. This material is primarily of research and development interest, investigated for wide-bandgap semiconductor and photonic applications where the oxynitride structure offers tunable electronic properties between conventional oxide and nitride ceramics. Its potential relevance lies in next-generation power electronics, optoelectronics, and high-temperature applications where the mixed anionic framework could provide improved thermal stability, chemical resistance, or dielectric performance compared to single-anion counterparts.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature ceramicsresearch/prototype materialsphotonic substratesadvanced functional ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.217	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.480	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnGeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental