ZnGeO2S

semiconductor

· ZnGeO2S

ZnGeO₂S is a quaternary semiconductor compound combining zinc, germanium, oxygen, and sulfur—a mixed anion material that blends oxide and sulfide chemistry to achieve tunable electronic and optical properties. This is a research-phase compound being investigated for optoelectronic applications where the bandgap and crystal structure can be engineered by varying composition; it belongs to the broader family of ternary and quaternary semiconductors that offer alternatives to binary compounds like ZnO or GaAs when wider bandgap tunability or specific photocatalytic activity is needed.

photocatalysis and water treatmentoptoelectronic device researchvisible-light semiconductorsthin-film photovoltaicsgas sensing applicationsmaterials research and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.00000743	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnGeO2S — Properties & Data | MatWorld

ZnGeO2S

Electrical Properties

Other Properties

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Environmental

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