ZnGeO2S
semiconductor· ZnGeO2S
ZnGeO₂S is a quaternary semiconductor compound combining zinc, germanium, oxygen, and sulfur—a mixed anion material that blends oxide and sulfide chemistry to achieve tunable electronic and optical properties. This is a research-phase compound being investigated for optoelectronic applications where the bandgap and crystal structure can be engineered by varying composition; it belongs to the broader family of ternary and quaternary semiconductors that offer alternatives to binary compounds like ZnO or GaAs when wider bandgap tunability or specific photocatalytic activity is needed.
photocatalysis and water treatmentoptoelectronic device researchvisible-light semiconductorsthin-film photovoltaicsgas sensing applicationsmaterials research and development
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — | ||
Magnetic Moment(μB) | -0.00000743 | μB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8600 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.